BF1100TRL13 datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

• Маркировка
  BF1100TRL13
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BF1100TRL13 Lead Free: Yes EU RoHS Compliant: Yes China RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: TIN Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: COMPLEX Case Connection: SOURCE Number of Elements: 2 Transistor Application: AMPLIFIER Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: DUAL GATE, ENHANCEMENT Transistor Type: RF SMALL SIGNAL Drain Current-Max (ID): 0.0300 A Highest Frequency Band: ULTRA HIGH FREQUENCY BAND Feedback Cap-Max (Crss): 0.0350 pF DS Breakdown Voltage-Min: 14 V
• Количество страниц
  11 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  340,60 KB

BF1100TRL13 datasheet скачать

BF1100TRL13 datasheet